PSpice User Guide

PSpice User Guide

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PSpice User Guide Digital device modeling October 2019 400 Product Version 17.4-2019 © 1999-2019 All Rights Reserved. The I/O model parameters INR, DRVZ, and TSTOREMN (see Table 7-2 on page 395) are used by the simulator to determine which nets should be simulated as charge storage nets. The simulator will simulate charge storage only for a net which has some devices attached to it which can be high impedance (Z), and which has a storage time greater than or equal to the smallest TSTOREMN of all inputs attached to the net. The storage time is calculated as the total capacitance (sum of all INLD and OUTLD values for attached inputs and outputs) multiplied by the total leakage resistance for the net (the parallel combination of all INR and DRVZ values for attached inputs and outputs). Note: The default values provided by the UIO model will not allow the use of charge-storage simulation techniques—even with circuits using non-PSpice libraries of digital devices. This is appropriate, since these libraries are usually for PCB-based designs. Creating your own interface subcircuits for additional technologies If you are creating custom digital parts for a technology which is not in the model libraries, you may also need to create AtoD and DtoA subcircuits. The new subcircuits need to be referenced by the I/O models for that technology. The AtoD and DtoA interfaces have specific formats, such as node order and parameters, which are expected by PSpice for mixed-signal simulations. If you are creating parts in one of the logic families already in the model libraries, you should reference the existing I/O models appropriate to that family. The I/O models, in turn, automatically reference the correct interface subcircuits for that family. These, too, are already contained in the model libraries. The AtoD interface subcircuit format is shown here: .SUBCKT ATOD + + + + + PARAMS: CAPACITANCE= + {O device, loading capacitor, and other + declarations} .ENDS

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