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PSpice User Guide Digital device modeling October 2019 399 Product Version 17.4-2019 © 1999-2019 All Rights Reserved. of 7.5%. The accuracy of the strength comparison is 15%. In other words, depending on the particular values of DRVH and DRVL, it might take as much as a factor of 3.45 to overdrive a signal, or as little as a factor of 2.55. The accuracy of the comparison increases as the ratio between DIGDRVF and DIGDRVZ decreases. You can set the DRVH, DRVL, DIGDRVF, DIGDRVZ, and DIGOVRDRV options in the Simulation Settings dialog box in PSpice A/D. Charge storage nets The ability to model charge storage on digital nets is useful for engineers who are designing dynamic MOS integrated circuits. In such circuits, it is common for the designer to temporarily store a one or zero on a net by driving the net to the appropriate voltage and then turning off the drive. The charge which is trapped on the net causes the net's voltage to remain unchanged for some time after the net is no longer driven. The technique is not normally used on PCB nets because sub-nanoampere input and output leakage currents would be required, as well as low coupling from adjacent signals. The simulator models the stored charge nets using a simplified switch-level simulation technique. A normalized (with respect to power supply) charge or discharge current is calculated for each output or transfer gate attached to the net. This current, divided by the net's total capacitance, is integrated and recalculated at intervals which are appropriate for the particular net. The net's digital level is determined by the normalized voltage on the net. Only the digital level (1, 0, R, F, X) on the net is used by device inputs attached to the net. This technique allows accurate simulation of networks of transfer gates and capacitive loads. The sharing of charge among several nets which are connected by transfer gates is handled properly because the simulation method calculates the charge transferred between the nets, and maintains a floating-point value for the charge on the net (not just a one or zero). Because of the increased computation, it takes the simulator longer to simulate charge storage nets than normal digital nets. However, charge storage nets are simulated much faster than analog nets.