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Heterojunction Bipolar Transistors

Key Takeaways

  • Heterojunction Bipolar Transistors (HBTs) differ from conventional Bipolar Junction Transistors (BJTs) by using varied semiconductor materials in the emitter and base regions, creating a heterojunction. This design restricts hole movement from base to emitter and allows high doping density in the base.

  • HBTs are made using materials like Silicon, Gallium Arsenide, Indium Phosphide, and their combinations, enabling their use in diverse applications. For instance, GaAs/AlGaAs HBTs are ideal for microwave circuits, InP/InGaAs for fiber-optic communications, and Si/SiGe for wireless communication.

  • HBTs differ from High Electron Mobility Transistors (HEMTs) in material composition, operating principles, and performance characteristics. HBTs, being bipolar devices, generally have higher operating voltages and noise compared to unipolar HEMTs.

NPN AlGaAs/GaAs HBT Simplified Diagram Structure

NPN AlGaAs/GaAs HBT Simplified Diagram Structure

A Heterojunction Bipolar Transistor (HBT) represents an advanced form of the traditional Bipolar Junction Transistor (BJT), distinguished by its use of different semiconductor materials in the emitter and base regions to form a heterojunction. This design enables the HBT to process extremely high-frequency signals, reaching up to several hundred GHz. As a result, HBTs are widely implemented in cutting-edge, ultrafast circuits, particularly in radio frequency (RF) systems. They are also favored in applications that demand high power efficiency, such as RF power amplifiers in cell phones. Furthermore, heterojunction transistors are increasingly used as a solution to overcome the limitations faced by poly-Si bipolar transistors.

Heterojunction Bipolar Transistor Construction

The key distinction between a Bipolar Junction Transistor (BJT) and a Heterojunction Bipolar Transistor (HBT) is the utilization of different semiconductor materials at the emitter-base and base-collector junctions, resulting in heterojunction. This unique structure primarily serves to restrict the movement of holes from the base to the emitter area, attributed to a higher potential barrier in the valence band compared to the conduction band. 

In contrast to traditional BJT technology, HBTs can employ a high doping density in the base. This approach effectively reduces the base resistance while preserving the transistor's gain. Additionally, the specific alignment of the semiconductor materials in HBTs leads to various types of heterojunctions, each with distinct applications and characteristics.

Common HBT Materials

Heterojunction bipolar transistors can be constructed from a variety of materials. For example:

  • Substrates can be made from Silicon, Gallium Arsenide, Indium Phosphide
  • Epitaxial Layers can be made from Silicon/Silicon-Germanium, Aluminum Gallium Arsenide/Gallium Arsenide, Indium Phosphide/Indium Gallium Arsenide

This allows for a wide variety of HBTs. 

Types of Heterojunction Bipolar Transistors

Type of HBT

Semiconductor Materials 

Key Features

Common Applications


Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs)

High electron mobility, excellent high-frequency performance

Microwave circuits, high-speed digital circuits


Indium Phosphide (InP)/Indium Gallium Arsenide (InGaAs)

Extremely high-speed operation, low noise

Fiber-optic communication systems, mm-wave applications


Silicon (Si)/Silicon-Germanium (SiGe)

Good thermal stability, lower cost than III-V semiconductors

Wireless communication, analog circuits


Silicon Carbide (SiC)

High thermal conductivity, high breakdown voltage

High-power, high-temperature applications


Gallium Arsenide Nitride (GaAsN)/Silicon (Si)

Integration with Si technology, high-speed performance

Integrated circuits with mixed technologies


Gallium Arsenide Antimonide (GaAsSb)/Indium Phosphide (InP)

High gain, low voltage operation

Low-power electronics, photonic devices

Simplified AlGaAs/GaAs band diagram with graded emitter base-b-base junction

Simplified AlGaAs/GaAs band diagram with graded emitter base-b-base junction

HBT Common Uses 

  • Heterojunction Bipolar Transistors (HBTs) made from Indium Phosphide/Indium Gallium Arsenide (InP/InGaAs) not only set records for their speed but are also exceptionally suited for monolithic optoelectronic integrated circuits. These HBTs incorporate a PIN-type photodetector, utilizing the base-collector-subcollector layers.

  • The chosen bandgap of InGaAs HBTS is particularly effective for detecting infrared laser signals at a wavelength of 1550 nm, a standard in optical communication systems.

  • HBTs are integral in optical fiber communications, significantly enhancing data transfer rates from 40 Gb/s to as high as 160 Gb/s. 

  • They also play a pivotal role in wideband, high-resolution DA/AD converters and digital frequency synthesizers, crucial for military radar and communication systems.

  • HBTs are key components in monolithic, millimeter-wave integrated circuits (MMICs), which are vital for the front ends of receivers and transmitters. This technological advancement aligns with the future need for transistors capable of achieving a 1 THz power-gain cutoff frequency.

  • HBTs are also used in low-noise amplifiers, which are key in radio and communication systems where maintaining the integrity of the received signal is critical.

  • HBTs are known for their high-speed switching capabilities, making them ideal for use in digital circuits, especially in applications where speed is critical, such as in processors and high-speed data communication systems.


HBTs, being bipolar devices, generally have higher operating voltages and noise compared to unipolar HEMTs; however, HBTs are less complex and can be more cost-effective in certain applications.



Heterojunction Bipolar Transistors (HBTs)

Material Composition

Typically GaAs, AlGaAs, GaN, AlGaN

Often Si/SiGe, GaAs/AlGaAs, InP/InGaAs

Operating Principle

Field Effect Transistor (FET)

Bipolar Junction Transistor (BJT)

Carrier Type

Unipolar (Electrons)

Bipolar (Electrons and Holes)

Complexity & Cost

Relatively complex and costly to manufacture

Less complex compared to HEMTs, cost-effective in certain applications

Noise Performance

Lower noise, suitable for low-signal applications

Higher noise than HEMTs in equivalent applications

Voltage Operation

Operates at lower voltages

Requires higher operating voltages

Electron Speed and Lithography Requirement

Requires finer lithography (0.2-0.5 µm) for similar frequency operation, leading to higher production costs

Governed by thin vertical layers via epitaxial growth, operating up to millimeter wave range; 1-3 µm lithography adequate

Trapping Effects and Noise

Greater trapping effects due to carriers traveling between surfaces and active channel-substrate interfaces

Reduced trapping effects and lower 1/f noise due to carrier flow through isolated active junctions; comparable to Silicon homojunction transistors

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