APPLICATION NOTE
2
in order to model Schottky diodes. The attached test case shows the effect with DC sweep of IS and N
parameters.
Simulation of schottky diode, Dmurs360t3
Fig. 1 and 2 show the circuit and the model being used for this simulation.
Figure 1: Circuit diagram in Allegro Design Entry CIS (Capture CIS)
Figure 2: PSpice Model parameters
Do a DC sweep of above circuit, sweeping V1 linearly from 0.1 to 3.5 with an increment of 0.001. Fig. 3 shows the
simulation results. Value of IS is 3e-07 and N is 2.2.
